VietNam 2013 

IXth Rencontres du Vietnam
Quy-Nhon, August 4-10, 2013


 Nanophysics: from fundamentals to applications

(the return)


Thursday 8
Topological Insulators

› 15:00 - 15:20 (20min)
Variations on the Spin Hall effect
Roberto Raimondi  1@  
1 : Dipartimento di Matematica e Fisica, Roma Tre University
Via della Vasca Navale 84, 00146 Rome Italy -  Italy

The spin Hall effect has emerged over the last decade as one of the most promising transport paradigm in spintronics. Perhaps, the main reason is due to the potential for an all-electrical control of the electron spin via the spin-orbit interaction. The latter, which arises as a consequence of the breaking of the inversion symmetry, may manifest in a number of ways, ranging from intrinsic bulk and structure inversion asymmetry as well as extrinsic effects due to impurities. After the initial discovery in semiconductors, the spin Hall effect has been reported also in various metallic systems and is also presently investigated in the two-dimensional electron gas existing at oxides interfaces.
In this paper, I will present various results concerning the spin Hall effect obtained over the last year.
In particular, I will show that, by using a SU (2) formulation, the different sources of spin-orbit interaction may be described in an elegant and unified way. Secondly, I will analyze the Onsager relations in the presence of SU (2) external potentials and their experimental implications.
Thirdly, I will derive a general connection between the spin Hall effect and the associated spin-heat response, showing how the latter can be more efficient than the spin-charge one as a converter.

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