VietNam 2013 

IXth Rencontres du Vietnam
Quy-Nhon, August 4-10, 2013


 Nanophysics: from fundamentals to applications

(the return)


Thursday 8
Topological Insulators

› 9:00 - 9:30 (30min)
Helical Edge Resistance Introduced by Charge Puddles
Leonid Glazman  1@  
1 : Department of Physics, Yale University
217 Prospect Street, New Haven, CT 06520 -  United States

A quantum dot tunnel-coupled to the helical edge of a two-dimensional topological insulator may enhance the electron backscattering within the edge. The backscattering rate increases with the dwelling time an electron spends in the dot. We find the resulting correction to the perfect conductance of the edge. The developed single-dot theory is used to assess the effect of electron puddles created by static charge disorder in a heterostructure on the helical edge conductance.

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