VietNam 2013 

IXth Rencontres du Vietnam
Quy-Nhon, August 4-10, 2013


 Nanophysics: from fundamentals to applications

(the return)


Thursday 8

› 14:00 - 14:20 (20min)
Electric Field Effect in Ultra-Thin Titanium Nitride Films
Hao Bui  1, *@  , Alexey Kovalgin  1@  , Rob Wolters  1@  
1 : MESA+ Institute for Nanotechnology, University of Twente
P.O. Box 217, 7500 AE Enschede -  Netherlands
* : Corresponding author

Using atomic layer deposition (ALD), we prepared highly uniform, continuous TiN films in the thickness range of 0.65 – 10 nm. Three-terminal devices with a bottom gate were realized as shown in figure 1; their current-voltage (I-V) characteristics were recorded in the temperature range of 4.5 – 300 K. We show appreciable field-induced current modulation up to 15% in sub-nanometer thin films of titanium nitride (TiN). The field effect is remarkably independent of temperature. A polarity asymmetry is found, possibly related to the different effects of the field on mobility and charge density (figure 2).

In the presentation we will further discuss on the remarkable film thickness dependence and the temperature independence of the field effect. Other aspects related to the electrical properties of the TiN films such as electrical resistivity and temperature coefficient of resistance (TCR) will be additionally reported.

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