VietNam 2013 

IXth Rencontres du Vietnam
Quy-Nhon, August 4-10, 2013

 QNplage

 Nanophysics: from fundamentals to applications

(the return)

 

Thursday 8
Dots and wires

› 15:00 - 15:20 (20min)
Spin-dependent transport phenomena in ferromagnetic MnAs nano-scale particles/ GaAs semiconductor hybrid system
Pham Nam Hai  1, *@  , Masaaki Tanaka  1@  
1 : University of Tokyo  (Univ. Tokyo)  -  Website
7-3-1 Hongo, Bunkyo-Ku, Tokyo -  Japan
* : Corresponding author

We review our recent studies on spin-dependent transport characteristics of nano-scale spintronic devices with ferromagnetic MnAs nanoparticles embedded in GaAs semiconductor. Devices such as magnetic tunnel junctions [1-3] and single-electron spin transistors [4] fabricated by bottom-up techniques (molecular beam epitaxy with subsequent thermal annealing unitizing spinodal decomposition [5], or laser irradiation [6]), and top-down techniques (optical and electron beam lithography) will be described. These devices show enhancement of tunneling magnetoresistance [1,2], high blocking temperature [3], extremely long spin-relaxation time [4], and novel spin-motive force [7]. These show the advantages of ferromagnetic nanoparticle/semiconductor materials as a key for nano-scale spintronic devices such as ultra high density magnetic memory and reconfigurable logic circuits. References: [1] P. N. Hai et al., Physica E 32 (2006) 416 [2]. P.N. Hai et al., Appl. Phys. Lett. 89, 242106 (2006). [3] P.N. Hai et al., J. Magn. Mag. Mat. 310 (2007) 1932. [4] P.N. Hai et al., Nature Nanotech. 5 (2010) 593, [5] P. N. Hai et al., J. Appl. Phys. 109 (2011) 073919. [6] P. N. Hai et al., Appl. Phys. Lett. 101 (2012) 193102. [7] P.N.Hai et al., Nature 458 (2009) 489.


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