VietNam 2013 

IXth Rencontres du Vietnam
Quy-Nhon, August 4-10, 2013

 QNplage

 Nanophysics: from fundamentals to applications

(the return)

 

Tuesday 6
Poster Session

› 21:00 - 23:00 (2h)
Atomically Flat SiC surfaces planarized by Catalyst-Referred Etching
Pho Bui  1, *@  , Shun Sadakuni  2@  , Ai Isohashi  2@  , Yasuhisa Sano  2@  , Kouji Inagaki  3@  , Yoshitada Morikawa  3, 4@  , Kazuto Yamauchi  2, 4@  
1 : Graduate School of Engineering, Osaka University, Japan  -  Website
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka -  Japan
2 : Graduate School of Engineering, Osaka University, Japan  -  Website
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka -  Japan
3 : Graduate School of Engineering, Osaka University, Japan  -  Website
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka -  Japan
4 : Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Japan
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka -  Japan
* : Corresponding author

Silicon carbide (SiC) is on the verge of becoming the material of choice for high-power electronics and optoelectronics because of its excellent electrical, thermal, and mechanical properties. To utilize full potentials of the SiC material, a smooth and nondamaged surface is required. Recently, the chemical mechanical polishing (CMP) method is employed for the surface planarization. This process uses abrasive and corrosive chemical slurry which are hazard for environmental and health. To overcome such problems, our group has invented a novel abrasive-free planarization method called catalyst-referred etching (CARE) planarization technique. This method used a catalyst plate made of platinum (Pt) whose function is the same as the polishing pad of the CMP method. In the planarization process, the wafer and the Pt plate were immersed in HF solution. Chemical etching occurs when the topmost SiC surface comes into contact with the catalyst plate in HF solution. The coexistence of HF solution and the Pt catalyst is critical for etching to occur. CARE can produce a crystallographically nondamaged and smooth SiC surface with a root-mean-square roughness of less than 0.1 nm over a whole wafer.


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