VietNam 2013 

IXth Rencontres du Vietnam
Quy-Nhon, August 4-10, 2013


 Nanophysics: from fundamentals to applications

(the return)


Thursday 8
Dots and wires

› 16:30 - 16:50 (20min)
Fast motion of magnetic domain walls in CoFe/Pd multilayer nanowire
Duc The Ngo  1@  
1 : Faculty of Engineering, National University of Singapore  (NUS)  -  Website
4 Engineering Drive 3, Singapore 117583 -  Singapore

Controlling motion of magnetic domain walls in nanostructures is currently a subject of great interests because of its potentials for spin-electronic applications. Among them, magnetic domain walls in lithographically nanopatterned nanowires have been extensively attractive for racetrack memory and logic devices. Current issues for approaching the practical application involve reducing the controlling current density, improving the motion speed of the walls. Most of works of this area were based on NiFe film where the magnetisation lyes inplane of the film. The NiFe nanowires are suitable for fast motion of magnetic domain walls, but it requires relatively current density for controlling the wall motion. We present here our findings of reducing current density for moving the domain walls using CoFe/Pd multilayer film in which the magnetisation aligns perpendicular to the film plane. The motion of the walls is attributed to the major contribution of the non-adiabatic spin-torque term, with a high non-adiabacity ~ 0.8 estimated from depinning model applied to anomalous Hall effect measurements. Preliminary results of time-resolved motions of the walls show very high speed of the walls, up to ~300 m/s, driven by spin current, which is very exciting for high-speed devices. Our CoFe/Pd multilayer nanowire here is very promising for spintronic devices (e.g. memory, logic devices) working with low power and high speed.

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